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| D1212UK semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. prelim. 1/96 p d power dissipation bv dss drain C source breakdown voltage * bv gss gate C source breakdown voltage * i d(sat) drain current t stg storage temperature t j maximum operating junction temperature 290w 40v 20v 30a C65 to 150c 200c mechanical data a m k j i h g (typ) f e d c b (4 pls) n 1 54 3 2 gold metallised multi-purpose silicon dmos rf fet 100w C 12.5v C 500mhz pushCpull features ? simplified amplifier design ? suitable for broad band applications ?low c rss ? simple bias circuits ? low noise ? high gain C 10 db minimum dh pin 1 source (common) pin 2 drain 1 pin 3 drain 2 pin 4 gate 2 pin 5 gate 1 absolute maximum ratings (t case = 25c unless otherwise stated) applications ? hf/vhf/uhf communications from 1 mhz to 500 mhz metal gate rf silicon fet tetrafet * per side dim mm tol. inches tol. a 13.97 0.26 0.550 0.010 b 5.72 0.13 0.225 0.005 c 45 5 45 5 d 9.78 0.13 0.385 0.005 e 1.65r 0.13 0.065r 0.005 f 23.75 0.13 0.935 0.005 g 1.52r 0.13 0.060r 0.005 h 30.48 0.13 1.200 0.005 i 19.17 0.26 0.755 0.010 j 0.13 0.02 0.005 0.001 k 2.54 0.13 0.100 0.005 m 1.52 0.13 0.060 0.005 n 5.08 0.50 0.200 0.020
D1212UK semelab plc. telephone (01455) 556565. telex: 341927. fax (01455) 552612. prelim. 1/96 parameter test conditions min. typ. max. unit 40 3 1 1 5.5 2.4 10 50 20:1 180 120 12 v gs = 0 i d = 100ma v ds = 12.5v v gs = 0 v gs = 20v v ds = 0 i d = 10ma v ds = v gs v ds = 10v i d = 3a p o = 100w v ds = 12.5v i dq = 4a f = 500mhz v ds = 0v v gs = C5v f = 1mhz v ds = 12.5v v gs = 0 f = 1mhz v ds = 12.5v v gs = 0 f = 1mhz v ma m a v mhos db % pf pf pf electrical characteristics (t case = 25c unless otherwise stated) drainCsource bv dss breakdown voltage zero gate voltage i dss drain current i gss gate leakage current v gs(th) gate threshold voltage* g fs forward transconductance* g ps common source power gain h drain efficiency vswr load mismatch tolerance c iss input capacitance c oss output capacitance c rss reverse transfer capacitance hazardous material warning the ceramic portion of the device between leads and metal flange is beryllium oxide. beryllium oxide dust is highly toxic and care must be taken during handling and mounting to avoid damage to this area. these devices must never be thrown away with general industrial or domestic waste. r thjCcase thermal resistance junction C case max. 0.6c / w thermal data * pulse test: pulse duration = 300 m s , duty cycle 2% total device per side per side |
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